Infineon Introduces New CoolSiC Portfolio in 62 mm Package for Higher Efficiency and Power Density
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Update time : 2024-01-04 10:06:33
Infineon Technologies AG has announced the addition of new industry standard packages to its CoolSiC 1200 V and 2000 V MOSFET module family. It is based on the proven 62 mm device half-bridge topology and on the newly introduced enhanced M1H silicon carbide (SiC) MOSFET technology.
This package enables SiC to be used in medium power applications above 250 kW, where conventional IGBT silicon technology has reached its power density limit. Compared to traditional 62mm IGBT modules, the range of applications now extends to solar, servers, energy storage, electric vehicle charging piles, traction, commercial induction cookers and power conversion systems. Enhanced M1H technology significantly widens the gate voltage window and ensures high gate reliability against induced voltage spikes caused by the driver and layout, even at high switching frequencies, without any limitations. In addition, extremely low switching and transmission losses minimize cooling requirements. In combination with high reverse voltages, these semiconductor devices also fulfill another requirement of modern system design. Thanks to Infineon's CoolSiCTM chip technology, converter designs can be made more efficient and the power rating of individual inverters can be further increased, thus reducing overall system costs. Equipped with a copper substrate and threaded interfaces, the package features a highly robust mechanical design that improves system availability, reduces service costs and minimizes downtime losses. Excellent reliability is achieved through robust thermal cycling capabilities and a continuous operation junction temperature (Tvjop) of 150°C. The package is designed with a symmetrical internal package that allows the top and bottom of the package to be used as a thermal interface. Its symmetrical internal package design allows the upper and lower switches to have identical switching conditions. An optional pre-coated thermal interface material (TIM) is available to further improve the module's thermal performance. The 1200 V CoolSiC MOSFETs in 62 mm packages are available in 5 mΩ/180 A, 2 mΩ/420 A and 1 mΩ/560 A. The 2000 V portfolio will include 4 mΩ/300 A and 3 mΩ/400 A models. 1200 V/3 mΩ and 2000 V/5 mΩ models will be available in the first quarter of 2024. The 1200 V/3 mΩ and 2000 V/5 mΩ models will be available in Q2024. Evaluation boards designed for fast characterization (double pulse/continuous operation) are also available. For ease of use, the boards offer flexible gate voltage and gate resistor adjustments, and can also be used as reference designs for mass-production driver boards.
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