Infineon Technologies AG is further improving its high-bandwidth, low-pin-count memory solution with the new HYPERRAM 3.0 device, which doubles the throughput to 800MBps with the new 16-bit extended HyperBus interface. With the HYPERRAM 3.0 device, Infineon offers a complete portfolio of low-pin-count, low-power, high-bandwidth memories. The chip is ideally suited for applications requiring extended RAM memory, including video buffering, factory automation, artificial intelligence Internet of Things (AIoT) and automotive vehicle networking (V2X), as well as applications requiring sticky note memory for data-intensive computing.
With nearly three decades of expertise in memory solutions, Infineon is pleased to bring another industry first to the market," said Ramesh Chettuvetty, Senior Marketing and Applications Director, Automotive Electronics, Infineon Technologies. The new HYPERRAM 3.0 memory solution offers much higher data throughput per pin than existing technologies on the market such as PSRAM and SDR DRAM. Its low power consumption feature enables lower power consumption without sacrificing throughput, making this memory ideal for industrial and IoT solutions." Infineon HYPERRAM is a PSRAM-based standalone volatile memory that provides a cost-effective way to add to expand memory. The data rate is comparable to SDR DRAM, but uses fewer pins and consumes less power, and the HyperBus interface has higher data throughput per pin, allowing for a less complex and cost-optimized design solution for the target application using fewer microcontrollers (MCUs) and fewer layers of PCBs.
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