Korean storage makers sharply increase semiconductor equipment investment Samsung by 25%
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Update time : 2023-12-29 13:37:33
Both Samsung and SK Hynix plan to increase semiconductor equipment investment in 2024. Among them, Samsung plans to invest about 27 trillion won (currently about Rs. 148.42 billion), a 25% increase over its 2023 investment budget. SK Hynix, on the other hand, plans to invest about 5.3 trillion won (about RMB 29.134 billion), a 100% increase over this year's investment.
In addition to the investment growth, Samsung Electronics and SK Hynix have also increased their 2024 semiconductor shipment targets. Samsung Electronics plans to increase DRAM and NAND production by about 24% each over this year. Specifically, the number of DRAM wafers invested per month is 250,000 wafers of 16-15nm grade (D1z), 180,000 wafers of 14nm grade (D1a), and 230,000 wafers of 13-12nm grade (D1b.) SK Hynix plans to increase DRAM production to the level prior to the cutbacks, i.e., before the end of last year, and is focusing on the expansion of the production scale of cutting-edge DRAMs such as HBM.
Samsung Electronics and SK Hynix began production cuts at the end of 2022, with plant openings as low as 50%. DRAM production of the two companies in 2024 is expected to be the same or higher than before the production cuts, while due to the slow recovery of the NAND market, the two companies production is expected to be lower than the pre-reduction level.
According to Morgan Stanley, global smartphone shipments in 2024 are forecast to grow by 3.9% over this year, stating, "AI (artificial intelligence) on devices will create new demand." AI requires high-capacity memory, which is also driving growth in demand for high-value products.
In terms of market share, Samsung holds about 38.9 percent of the DRAM segment while SK Hynix holds about 34.3 percent, and in the NAND segment, Samsung has about 31.4 percent of the market while SK Hynix holds about 20.2 percent, according to data released by market researcher Jibang Consulting.
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