ONSemi's NVF5P03T3G is a P-channel power MOSFET. It has an ultra-low on-resistance, supports logic-level gate drive and comes in a compact SOT-223 package. With specified avalanche energy, it's AEC-Q101 certified and RoHS-compliant. Ideal for DC-DC converters, power management and motor control, it helps improve circuit efficiency and system reliability.
ONSemi NVF5P03T3G's Features
ONSemi's NVF5P03T3G is a P-channel power MOSFET with excellent characteristics. It has an ultra-low on-resistance, and its typical value can reach 76 mΩ under specific conditions. This significantly reduces the power loss in the on-state, improves the circuit efficiency, and can effectively extend the usage duration of battery-powered devices.
This device supports logic-level gate drive, which facilitates direct connection with various logic circuits. It simplifies the circuit design, reducing the design cost and complexity. It is packaged in a miniature SOT-223 surface-mount package, featuring a compact size that saves circuit board space and is suitable for high-density integrated electronic devices.
In addition, the NVF5P03T3G has a specified avalanche energy and can withstand certain instantaneous high-voltage impacts, ensuring reliability in application scenarios where voltage spikes are likely to occur, such as inductive loads. Moreover, it has passed the AEC-Q101 certification and has PPAP capabilities, meeting the strict standards of the automotive industry. At the same time, it is lead-free and RoHS-compliant, meeting environmental requirements, and is applicable to various applications with high requirements for reliability and environmental friendliness.
ONSemi NVF5P03T3G's Applications
ONSemi's NVF5P03T3G is a P-channel power MOSFET that plays a crucial role in various circuits. In the field of DC-DC converters, with its ultra-low on-resistance () and high efficiency, it can effectively reduce energy losses, achieve stable voltage conversion, and improve the utilization efficiency of power supplies. It is widely used in various electronic devices that require precise voltage conversion.
In terms of power management, it can optimize the power distribution of the system and extend the battery life of battery-powered devices. For example, in portable electronic products, it can better manage the battery energy output and enhance the overall performance of the device.
In addition, the device also performs well in motor control and inductive load driving scenarios. It can reliably control the operation of motors and efficiently drive inductive loads. Moreover, it has specified avalanche energy and AEC-Q101 certification, meeting the extremely high reliability requirements of applications such as the automotive industry, ensuring stable operation in complex electrical environments.
ONSemi NVF5P03T3G's Attributes
| Parameter |
Value |
Parameter |
Value |
| Manufacturer: |
onsemi |
Technology: |
Si |
| Mounting Style: |
SMD/SMT |
Transistor Polarity: |
P-Channel |
| Number of Channels: |
1 Channel |
Vds - Drain-Source Breakdown Voltage: |
30 V |
| Id - Continuous Drain Current: |
5.2 A |
Rds On - Drain-Source Resistance: |
107 mOhms |
| Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: |
1.75 V |
| Qg - Gate Charge: |
15 nC |
Minimum Operating Temperature: |
- 55 C |
| Maximum Operating Temperature: |
+ 150 C |
Pd - Power Dissipation: |
3.13 W |
| Channel Mode: |
Enhancement |
Qualification: |
AEC-Q101 |
| Series: |
NTF5P03 |
Packaging: |
MouseReel |
| Brand: |
onsemi |
Configuration: |
Single |
| Fall Time: |
10 ns |
Forward Transconductance - Min: |
3.9 S |
| Rise Time: |
33 ns |
Factory Pack Quantity: |
4000 |
| Transistor Type: |
1 P-Channel |
Typical Turn-Off Delay Time: |
38 ns |
| Typical Turn-On Delay Time: |
10 ns |
|
|
ONSemi NVF5P03T3G's Category - MOSFETs
The onsemi NVF5P03T3G, which is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), is a commonly used semiconductor in digital and analogue circuits and is also a useful power device. As the original compact transistor, it is suitable for a wide variety of electrical applications.
It has been argued that many of the 21st century’s technological developments wouldn’t have been possible without the MOSFET like the onsemi NVF5P03T3G. It is more widely used than the BJT as it requires minimal current for load - current control. The level of conductivity can be increased from the ‘normally off’ state when the onsemi NVF5P03T3G is set to enhancement mode. Voltage transmitted via the gate can minimise conductivity from the ‘normally on’ state. The process of miniaturising the onsemi NVF5P03T3G is relatively simple and it can be effectively scaled down for compact applications.
Additional advantages of the onsemi NVF5P03T3G include rapid switching (particularly in relation to digital signals), minimal power consumption, and high - density capacity which makes it ideally suited to large - scale integration.
The onsemi NVF5P03T3G is a core component of the integrated circuit and it can be designed and fabricated in a single chip due to its compact size. It features four terminals, these being the Source (S), Gate (G), Drain (D), and Body (B). The body is typically connected to the source terminal so that the onsemi NVF5P03T3G functions as a field - effect transistor.
ZXMP10A13FQTA vs NVF5P03T3G
Part Number
|
ZXMP10A13FQTA+BOM |
NVF5P03T3G+BOM |
| Category |
Transistors - FETs, MOSFETs - Single |
Transistors - FETs, MOSFETs - Single |
| Manufacturer |
Diodes Incorporated |
ON Semiconductor |
| Description |
MOSFET P-CH 100V 600MA SOT23 |
MOSFET P-CH 30V 3.7A SOT-223 |
| Package |
Jinftry-Reel® |
Cut Tape (CT) |
| Series |
- |
Automotive, AEC-Q101 |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
TO-261-4, TO-261AA |
| Supplier Device Package |
SOT-23-3 |
SOT-223 (TO-261) |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Power Dissipation (Max) |
625mW (Ta) |
1.56W (Ta) |
| FET Type |
P-Channel |
P-Channel |
| FET Feature |
- |
- |
| Drain to Source Voltage (Vdss) |
100 V |
30 V |
| Current - Continuous Drain (Id) @ 25°C |
600mA (Ta) |
3.7A (Ta) |
| Rds On (Max) @ Id, Vgs |
1Ohm @ 600mA, 10V |
100mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
1.8 nC @ 5 V |
38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds |
141 pF @ 50 V |
950 pF @ 25 V |
| Vgs (Max) |
±20V |
±20V |
| Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
4.5V, 10V |
Wls Electronic has a large inventory of onsemi NVF5P03T3G. We guarantee that they are original and brand-new parts purchased directly from onsemi. We can provide quality test reports for NVF5P03T3G according to your requirements. To get a quotation, simply fill in the required quantity, contact name, and email address in the quick quotation form on the right-hand side. Our sales representatives will contact you within 12 hours. You can contact us online at any time or send us an email: SALES@WLSCHIP.COM.
