NXP Semiconductors announced the new higher power BTS7202 RF front-end receiver module (FEM) and BTS6403/6305 pre-driver amplifiers to support 5G large-scale multiple-input multiple-output (MIMO) base station construction with up to 20W per channel power. Developed and implemented using NXP's silicon germanium (SiGe) process, the two new devices offer moderate power consumption to help mobile network operators (MNOs) reduce operating costs. In addition, the high linearity and low noise figure of the new devices help improve 5G signal quality.
As the number of 5G networks continues to grow worldwide, more and more MNOs are adopting 32T32R solutions in less densely populated areas of cities and suburban areas to improve the signal coverage of large-scale MIMO base stations. However, with 32T32R solutions, for each channel, higher power RF devices need to be used to ensure the total power required for 5G signal coverage. As 5G networks become denser, higher power solutions are required to ensure consistent network and signal quality," said Doeco Terpstra, vice president and general manager of smart antenna solutions at NXP. Our customers recognize that higher power solutions not only meet the power requirements of network operators' 32-antenna arrays, but also do not compromise network quality." Whether it is a discontinued chips or a popularelectronic components, you can contact WLS Electronics sales@wlschip.com, we will do our best to meet your need
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