ON Semiconductor's EliteSiC Silicon Carbide Family of Solutions Delivers Industry-Leading Energy Efficiency
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Update time : 2023-01-11 10:21:23
ON Semiconductor Corporation (ONSemi, NASDAQ: ON), a leader in smart power and smart sensing technologies, announced that it has named its silicon carbide (SiC) family "EliteSiC". At this week's Consumer Electronics Show (CES) in Las Vegas, ON will showcase three new members of the EliteSiC family: a 1700 V EliteSiC MOSFET and two 1700 V avalanche EliteSiC Schottky diodes. These new devices provide reliable, energy-efficient performance for energy infrastructure and industrial drive applications and highlight ON Semiconductor's position as a leader in industrial silicon carbide solutions.
ON Semiconductor's 1700 V EliteSiC MOSFET (NTH4L028N170M1), provides a higher breakdown voltage (BV) SiC solution required for high-power industrial applications. Two 1700 V avalanche EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) enable designers to achieve designs that operate stably at high temperatures and high voltages while being empowered by SiC for high energy efficiency. The new 1700 V EliteSiC devices offer outstanding energy efficiency and lower power losses, reinforcing the high standards of performance and quality of our EliteSiC family, while further expanding the depth and breadth of ON Semiconductor's EliteSiC breadth. Together with our end-to-end SiC manufacturing capabilities, ON Semiconductor offers the technology and supply assurance to meet the needs of industrial energy infrastructure and industrial drive providers." Renewable energy applications are moving to higher voltages, with solar systems moving from 1100 V to 1500 V DC bus. To support this change, customers need MOSFETs with higher breakdown voltage (BV) values. the new 1700 V EliteSiC MOSFETs have a maximum Vgs range of -15 V/25 V for fast switching applications where the gate voltage is increased to -10 V, providing higher system reliability. Under 1200 V, 40 A test conditions, the 1700 V EliteSiC MOSFET achieves a market-leading gate charge (Qg) of 200 nC compared to nearly 300 nC for comparable competitive devices. low Qg is critical to achieving high energy efficiency in fast-switching, high-power renewable energy applications. At a rated breakdown voltage (BV) of 1700 V, the EliteSiC Schottky diode device provides better margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode. The new device also offers excellent reverse leakage current performance with a maximum reverse current (IR) of only 40 µA at 25°C and 100 µA at 175°C - significantly better than competitive devices that are typically rated at 100 µA at 25°C.
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