Last week, global semiconductor maker ROHM Semiconductor held a media conference in Shenzhen, China. At the meeting, ROHM announced that it has developed the EcoGaNTM Power Stage IC "BM3G0xxMUX-LB" for primary-side power supplies for industrial equipment such as data servers and consumer electronic devices such as AC adapters.
According to ROHM, the new product integrates a new generation of power devices 650V GaN HEMT, dedicated gate drivers that maximize GaN HEMT performance, new features, and peripheral components. In terms of power consumption, compared with existing Si MOSFETs, the new product device size can be reduced by about 99% and power loss can be reduced by about 55%, helping to reduce the size or loss of servers and AC adapters. In terms of appearance, the new product is a VQFN package, an 8x8mm, 1mm thick IC, and an integrated package. In terms of the number of components, ordinary products are 9 related components, while ROHM's new product further simplifies the driving method, and only 1 external Power Stage related component is required, which helps to reduce the miniaturization of application products. In terms of voltage, the new product supports a wider drive voltage range (2.5V~30V) and has the performance of various controller ICs that support primary-side power supplies, so it can replace existing Si MOSFETs. At present, there are two new products, namely BM3G007MUV-LB and BM3G015MUV-LB, with on-resistance of 70 milliohms and 150 milliohms respectively.
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