Samsung Announces Its Largest Capacity 32Gb DDR5 DRAM in the 12nm Class
Views : 273
Update time : 2023-09-06 11:09:08
On September 1, 2023, Samsung announced the development of its highest-capacity 32Gb DDR5 DRAM (DDR5 DRAM: fifth-generation Double Data Rate Synchronous Dynamic Random Access Memory) using 12-nanometer (nm) class process technology. This achievement follows Samsung's start of mass production of 12nm-class 16Gb DDR5 DRAM in May 2023, which solidifies Samsung's position in the field of developing next-generation DRAM memory technology and opens a new chapter in the era of high-capacity memory.
"Building on Samsung's newly introduced 12nm-class 32Gb memory, we were able to develop a solution that realizes a 1TB memory module, which helps to meet the growing demand for high-capacity DRAM memory in the age of artificial intelligence and big data." SangJoon Hwang, Executive Vice President of Memory Development Group, Memory Division, Samsung Electronics, said, "We will continue to develop memory solutions to break through the bottleneck in memory technology through differentiated process and design technologies." Samsung has increased its memory capacity 500,000 times over the past 40 years since 1983, when it developed the first 64 kilobit (Kb) memory. The latest development of 32Gb DDR5 memory particles, which uses cutting-edge process technology, increased integration density and optimized package design, doubles the capacity of Samsung's single DRAM memory particles in the same package size compared to DDR5 16Gb particles. In particular, in the past, DDR5 128GB memory modules made with 16Gb memory particles required a through-silicon vias (TSV) process. Now, by using the newly developed 32Gb memory particles, it is possible to produce 128GB memory modules even without using the through-silicon via (TSV) process. The power consumption of the 128GB memory module has been reduced by approximately 10% compared to a 128GB memory module using a 16Gb memory package. This technological breakthrough makes this product the preferred solution for energy-efficiency-conscious enterprises such as data centers. Based on the 12nm-class 32Gb DDR5 DRAM, Samsung plans to continue to expand its high-capacity memory product lineup to meet the continuously growing needs of the high-performance computing and IT industries. By offering 12nm-class 32Gb memory to data centers, as well as to customers adopting applications such as artificial intelligence and next-generation computing, Samsung hopes to solidify its position at the forefront of the next-generation memory market. Going forward, the product will also play a vital role in Samsung's long-term collaborations with other core industry partners. Mass production of the new 12nm-class 32Gb DDR5 DRAM is scheduled to begin by the end of this year.
The LDK220 series of low-dropout linear regulators (LDOs) is a high-performance device designed specifically for low-power consumption and high-precision voltage regulation, widely used in scenarios such as consumer electronics, industrial control, and po
Xilinx Spartan®-7 FPGA Family stands as a defining solution in the mid-range FPGA landscape, blending high performance, energy efficiency, and cost-effectiveness to redefine versatility for industrial, IoT, and consumer electronics applications. Built on
The Altera FLEX series was more than a lineup of FPGAs—it was a blueprint for how programmable logic devices could evolve to meet diverse market needs. The FLEX 8000 laid the architectural groundwork, the FLEX 10K redefined functionality with embedded mem
Among TI standout offerings, the LM4765 and LM4766 are dual-channel amplifiers designed to cater to diverse audio needs—from compact setups to high-fidelity systems. While sharing the same product lineage, these chips differ significantly in power output,
