Samsung announces partnership with Intel to develop DRAM chips
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Update time : 2022-11-02 14:50:32
BusinessKorea reported that Samsung Electronics announced the development of a 512 GB DDR5 memory module and will cooperate with Intel to develop related technologies and products.
At present, Samsung Electronics is expanding its cooperation with Intel to lead the field of next-generation DRAM chips. And Intel recently decided to make a large-scale investment in foundry, so the two companies are cooperating and competing at the same time.
Samsung's fifth-generation DDR product can provide a maximum data transfer rate of 7,200 Mbps, more than double the rate of DDR4. In addition, the product features eight layers of 16 Gb silicon vias that can be stacked to maximize capacity, while four layers are mainly used for DDR4.
In addition, the high-k metal gate process has been applied for the first time. The technology is based on the fast and firm current output port closure function to minimize power consumption to reduce leakage current. According to Samsung Electronics, the product is about 13% more efficient in terms of power consumption. DDR5 is likely to become mainstream in the market while improving its performance. According to market research firm Omdia, DDR5 sales are expected to grow from 0.6% of the DRAM market to 53.2% from this year to 2024. Growth requires a partnership with Intel, which designs and manufactures CPUs. The company is expected to release DDR5-compatible products in the second half of this year. Samsung Electronics is planning to gradually commercialize high-capacity DDR5 products.
Intel explained: "As the amount of data that needs to be processed grows exponentially, next-generation DDR5 memory chips are becoming increasingly important in cloud data centers, networking and edge computing... Samsung Electronics will develop compatible with our server CPUs DDR5 memory chips."
