Samsung Plans to Make BSPDN Back Power Technology Available for 1.4nm Processes by 2027
Views : 119
Update time : 2023-08-17 14:29:05
Jung Ki-tae Jung, Chief Technology Officer of Samsung Electronics' Foundry Division, announced at a recent forum that "we plan to apply BSPDN to the 1.4 nm process in 2027".
Back Side Power Supply (BSPDN) technology is an innovative technology for advanced semiconductors that aims to better utilize the potential of the space on the back side of the wafer, but has yet to be implemented globally. This is the first time Samsung Electronics has disclosed its BSPDN development process. Although the semiconductor industry is no longer using gate length and metal half-pitch to systematically name technology nodes, there is no doubt that current process technology is also the smaller the number the more advanced. As semiconductor process miniaturization routes continue to move forward, the distance between circuits within integrated circuits continues to narrow, resulting in interference with each other, a limitation that can be overcome with BSPDN technology because we can utilize the backside of the wafer to build power supply routes to separate circuit and power supply spaces. Not only Samsung Electronics, TSMC and Intel and other manufacturers are also actively seeking technological breakthroughs, and now Japan's Tokyo Electron (TEL) and Austria's EV Group (EVG) is providing BSPDN implementation equipment. For now, Intel's backside power supply technology, called PowerVia, is designed to reduce power consumption and improve efficiency and performance, and the next Intel 20A will be Intel's first node to use PowerVia technology and RibbonFET full wrap-around gate transistors, and is expected to be ready in the first half of 2024 and will be used in the future volume production of the Arrow The Lake platform, which is currently in First Stepping at the fab, is expected to be ready in the first half of 2024 and will be used in the future mass production of the Arrow platform. In addition to this, TSMC also plans to apply similar technology in sub-2nm processes, with the goal of achieving this by 2026. Samsung Electronics BSPDN technology goal is to be applied to the 1.4nm process in 2027, but according to market demand may be delayed. A source at Samsung Electronics said, "The mass production time of semiconductors using backside power supply technology may change depending on customers' schedules." Samsung Electronics aims to mass produce the 2nm process in 2025, ahead of the 1.4nm process. Samsung is said to be currently conducting a customer demand survey for the application of backside power supply technology.
The LDK220 series of low-dropout linear regulators (LDOs) is a high-performance device designed specifically for low-power consumption and high-precision voltage regulation, widely used in scenarios such as consumer electronics, industrial control, and po
Xilinx Spartan®-7 FPGA Family stands as a defining solution in the mid-range FPGA landscape, blending high performance, energy efficiency, and cost-effectiveness to redefine versatility for industrial, IoT, and consumer electronics applications. Built on
The Altera FLEX series was more than a lineup of FPGAs—it was a blueprint for how programmable logic devices could evolve to meet diverse market needs. The FLEX 8000 laid the architectural groundwork, the FLEX 10K redefined functionality with embedded mem
Among TI standout offerings, the LM4765 and LM4766 are dual-channel amplifiers designed to cater to diverse audio needs—from compact setups to high-fidelity systems. While sharing the same product lineage, these chips differ significantly in power output,
