Samsung will mass-produce 300-layer NAND flash memory chips next year: 1000 layers will be achieved in 2030
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Update time : 2023-10-24 10:14:12
On October 17, Lee Jung-Bae, head of Samsung Electronics' memory business, published an article today, saying that Samsung has produced a running chip based on its ninth-generation V-NAND flash memory products, and hopes to achieve mass production early next year. At the same time, Samsung is also developing the industry's leading 11nm DRAM chip. The person in charge also said that for DRAM, Samsung is developing 3D stacking structures and new materials; for NAND flash, it is achieving the smallest cell size in the semiconductor industry by increasing the number of stacked layers while reducing the height.
The plan will also put Samsung ahead of SK Hynix, which recently announced plans to start mass production of 321-layer NAND chips in 2025. Samsung's ninth-generation NAND flash memory chips are expected to still use dual-stack technology, which involves creating NAND memory in two separate processes and then assembling them together. Unlike its old rival Samsung, SK Hynix's 300-layer NAND products use triple-stack technology, each stacked with 120, 110 and 91 layers, respectively, and finally combined into a single chip. Compared to triple stacking, the dual stack process has considerable advantages in production cost and efficiency.
Samsung's move is also aimed at using cost advantages to outperform rivals, thereby consolidating its market leadership. At Samsung Technology Day last year, Samsung said it would be able to stack up to 1,000 layers of technology by 2030. However, without the triple stacking process, it will be a challenge to achieve more than 400 layers of stacking. As a result, industry insiders said Samsung may start adopting triple stacking technology in the 10th generation of 430-layer products.
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