SK Hynix completes development of 1β DRAM process technology
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Update time : 2023-06-02 10:40:27
SK Hynix announced that it has completed the development of its 1β process technology (fifth-generation 10nm grade) and has subjected its DDR5 server DRAMs to The Intel Data Center Certified memory program, a formal certification process for compatibility with memory products used in Intel's fourth-generation Xeon Scalable Data Center processors, codenamed Sapphire Rapids. This is the formal certification process for the compatibility of memory products used in Intel's fourth-generation Xeon Scalable Data Center processors, codenamed Sapphire Rapids.
SK Hynix said that the DDR5 DRAM product offered this time operates at 6.4Gbps, the highest rate of its kind, and offers a 33% increase in data processing speed compared to the initial test items. Moreover, it adopts HKMG (High-K Metal Gate) process technology, which reduces power consumption by 20% compared to the fourth generation of 10nm grade 1α process technology products. SK Hynix emphasizes that the successful development of the 1β process technology represents the ability to supply DRAM products with both performance and power consumption to customers worldwide, and hopes to start mass production of the most advanced 1b process technology in 2023 to improve its performance in the second half of 2023 with the industry's highest level of DRAM competitiveness. In addition, SK Hynix intends to extend the 1β process technology to products such as LPDDR5T and HBM3E. In fact, SK Hynix's financial situation has not been good recently, as the financial report for the first quarter of fiscal 2023 announced last month showed a decrease in revenue and an increase in operating loss in the quarter compared to the fourth quarter of fiscal 2022 due to the continued downturn in the memory semiconductor market, which was hit by weak demand and falling product prices. In response, SK Hynix has decided to boost its revenue by focusing on sales of high-performance DRAMs such as DDR5 server DRAM and HBM, as well as SSDs and uMCPs using 176-layer stacked NAND Flash.
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