The FDD18N20LZ is a Power MOSFET, N-Channel, Logic Level, UniFETTM optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.
Features
- RDS(on) = 125mΩ (Max.)@ VGS = 10V, ID = 8A: This feature ensures low on-state resistance for efficient power switching.
- Low gate charge (Typ. 30nC): This reduces the energy required to turn the device on and off, resulting in improved efficiency and reduced electromagnetic interference (EMI).
- Low Crss (Typ. 25pF): This feature minimizes the capacitance between the drain and source pins, reducing switching losses and improving overall system performance.
- 100% avalanche tested: This ensures that the device can withstand high-energy pulses without damage or degradation.
- Improved dv/dt capability: This feature enables faster rise times for improved system responsiveness and reduced EMI.
- ESD improved capability: This ensures that the device is resistant to electrostatic discharge (ESD) events, reducing the risk of damage or malfunction.
- RoHS compliant: This feature ensures that the device meets the requirements for Restriction of Hazardous Substances (RoHS), making it suitable for use in environmentally friendly applications.
Applications
- Analog and digital signal switching: The FDD18N20LZ is well-suited for high-frequency, low-voltage applications that require fast switching times and low power consumption.
- Pulse-width modulation (PWM) control: This device can be used to generate PWM signals for motor control, lighting, or other applications where precise timing is required.
- Power supply management: The FDD18N20LZ can be used to regulate power supplies in a wide range of applications, including audio equipment, medical devices, and industrial controls.
- Solid-state relays (SSRs): This device can be used as an SSR to replace mechanical relays in applications where high-speed switching is required.
Equivalents
For similar functionalities, consider these alternatives to the FDD18N20LZ:
- FQP50N06L: A logic-level N-channel power MOSFET with similar specifications and performance characteristics.
- IRF540N: A high-power N-channel power MOSFET with a similar voltage rating and current handling capability.
- BSS84: A logic-level N-channel power MOSFET with a similar voltage rating and current handling capability, but with a slightly different package type.
Specifications
| Series |
UniFET™ |
Product Status |
Active |
| FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
125mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
40 nC @ 10 V |
| Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1575 pF @ 25 V |
| Power Dissipation (Max) |
89W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
| Package / Case |
TO-252-3, DPAK
(2 Leads + Tab), SC-63 |
Base Product Number |
FDD18N20 |
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