Nexperia Introduces Advanced 650 V Silicon Carbide Diodes for Demanding Power Conversion Applications
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Update time : 2023-04-21 12:52:00
Nexperia, a high-capacity manufacturing specialist in basic semiconductor devices, today announced the availability of 650 V silicon carbide (SiC) Schottky diodes for power supply applications requiring ultra-high performance, low loss and high power efficiency. 10 A, 650 V SiC Schottky diodes meet industrial-grade device standards to meet the challenges posed by high-voltage and high-current applications, including switch-mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, intermittent power supplies and photovoltaic inverters, and to improve sustained operation, AC-DC and DC-DC converters, battery charging infrastructures, uninterruptible power supplies and photovoltaic inverters, with improved continuous operation. For example, data centers with power supplies designed with Nexperia PSC1065K SiC Schottky diodes will be more compliant with stringent energy efficiency standards than data centers using only silicon-based solutions.
With temperature-independent capacitive switching and zero-recovery performance, the PSC1065K offers advanced performance and excellent quality factor (QC x VF). The PSC1065K's combined PIN Schottky (MPS) structure also offers other advantages, such as excellent inrush current tolerance, which eliminates the need for additional protection circuitry. These features significantly reduce system complexity and enable hardware designers to achieve higher efficiency in a smaller form factor for ruggedized, high-power applications. nexperia has a reputation as a supplier of a range of high-quality semiconductor technology products that designers can trust. This SiC Schottky diode is available in a true 2-pin (R2P) TO-220-2 through-hole power plastic package. Other package options include surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) packages in a true 2-pin configuration for enhanced reliability in high voltage applications up to 175°C. We are proud to offer a high-performance SiC Schottky diode that excels among the solutions currently available," said Katrin Feurle, senior director of Nexperia's SiC product group. As people become more energy conscious, we are working to bring more choice and convenience to the market to meet the significantly increased demand for high-capacity, high-efficiency applications." Nexperia plans to continue to grow its SiC diode portfolio to include operating voltages of 650 V and 1200 V, current ranges of 6-20 A and automotive grade devices. Samples of the new SiC diodes are available now, and mass production began recently.
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