The ONSemi ESDR0502NMUTBG is an ultra-low capacitance surge protection array. With a typical capacitance of 0.3pF between I/O lines and ground, it ensures minimal signal interference during high-speed data transmission, ideal for USB 2.0 and similar applications. Meeting IEC 61000 - 4 - 2 Level 4 for ESD protection, it withstands up to 8.0kV contact ESD. Being lead-free, RoHS-compliant, and UL 94V - 0 rated, it’s both eco-friendly and safe, widely used in communication, display, and audio devices.
ONSemi ESDR0502NMUTBG’s Features
Low Capacitance Characteristics: The typical capacitance value between the I/O line and the ground is 0.3pF. This low capacitance feature makes its impact on the signal extremely small during high-speed data transmission, effectively ensuring the stability and high speed of data transmission. It is very suitable for high-speed application scenarios with high requirements for signal integrity, such as USB 2.0.
High ESD Protection Level: It meets the requirements of Level 4 of the IEC 61000 - 4 - 2 standard, and the contact ESD can reach up to 8.0kV. This means that it can withstand high-intensity electrostatic discharge, providing reliable protection for the connected high-speed data lines and reducing the risk of device damage or failure caused by ESD events.
Environmental Protection Characteristics: This device is lead-free and compliant with the RoHS standard, which is environmentally friendly during the production and use processes. It meets the environmental protection requirements of modern electronic products and is convenient for application in various environmentally friendly electronic products.
High Flammability Resistance Rating: The UL flammability resistance rating is 94V - 0. This feature enhances the safety of the product during use and reduces the risk of fire caused by electrical failures, especially suitable for electronic devices with high safety requirements.
ONSemi ESDR0502NMUTBG’s Applications
High-speed Communication Line Protection: It plays a crucial role in various high-speed communication scenarios. For example, in the protection of USB 2.0 high-speed data lines and power lines, it can withstand electrostatic discharge (ESD) and cable discharge, preventing data transmission errors or device damage and ensuring the stable operation of USB devices. In Gigabit Ethernet, its low capacitance and high ESD protection capabilities can ensure the high-speed and stable transmission of network signals, avoiding network interruptions or data loss caused by electrostatic interference.
Display Device Protection: It is suitable for monitors and flat panel displays. The interfaces of these devices are vulnerable to ESD impacts. The ESDR0502NMUTBG can protect the interface circuits, maintain the stability of the display signals, and prevent abnormal images or damage to the monitors.
Audio Device Protection: It is commonly used in audio devices such as MP3 players. It can protect the internal circuits of the devices from the influence of ESD, ensure the normal processing and transmission of audio signals, avoid problems such as noise and stuttering, and improve the audio playback quality.
ONSemi ESDR0502NMUTBG’s Attributes
| Status |
Active |
Compliance |
PbAHP |
| Package Type |
UDFN-6 |
Case Outline |
517AA |
| MSL Type |
1 |
MSL Temp (°C) |
260 |
| Container Type |
REEL |
Container Qty. |
3000 |
| ON Target |
N |
Interface |
USB 2.0 |
| Number of Lines |
4 |
Direction |
Unidirectional |
| C Max (pF) |
0.6 |
V(BR) Min (V) |
6 |
| VRWM Max (V) |
5.5 |
IR Max (µA) |
1 |
| PPK Max (W) |
100 |
|
|
ONSemi ESDR0502NMUTBG’s Symbol,Footprint and 3D Model
ONSemi ESDR0502NMUTBG’s Category-TVS Diodes
TVS diodes, or Transient Voltage Suppressor diodes, are crucial components in modern electronics for safeguarding circuits against transient overvoltage events. Unlike regular diodes, which primarily conduct current in one direction under normal conditions, TVS diodes are engineered to operate in the reverse breakdown region when a transient voltage exceeds their breakdown voltage. During normal operation, they present high impedance to the circuit, with only minimal leakage current flowing through. But upon encountering a sudden surge, such as electrostatic discharge (ESD) or electrical fast transients, they rapidly conduct, diverting excess current and clamping the voltage to a safe level to protect sensitive components. Key parameters of TVS diodes include working voltage, breakdown voltage, and clamping voltage. Selecting a TVS diode with an appropriate working voltage close to the circuit's operating voltage is essential. The clamping voltage determines the maximum voltage the protected device will experience during a transient, making it a critical factor in ensuring component safety.
The ONSemi ESDR0502NMUTBG exemplifies the advanced features of modern TVS diodes. With its ultra - low capacitance of 0.3pF, it minimizes signal interference in high - speed data transmission scenarios, such as USB 2.0. It offers high ESD protection, meeting IEC 61000 - 4 - 2 Level 4 requirements, and can withstand up to 8.0kV contact ESD. Its multi - functional design and reliability make it an ideal choice for protecting a wide range of electronic devices.
ESDR0502NMUTBG’s Manufacturer-ONSemi
ONSemi has made remarkable achievements in the field of TVS Diodes. With its profound technical accumulation and continuous innovation, it has launched a large number of TVS diode products with excellent performance. For example, aiming at high-speed data transmission scenarios, it has developed low-capacitance TVS devices such as ESDR0502NMUTBG, which can effectively reduce signal interference and ensure stable and high-speed data transmission. In scenarios with high requirements for reliability, ONSemi's TVS diodes can withstand high-energy transient impacts, meet stringent ESD protection standards, and provide reliable protection for circuits. Its products are widely used in various fields such as automotive, industrial, and consumer electronics, helping industries to improve the safety and stability of circuits and promoting the continuous expansion and progress of TVS Diodes technology in practical applications.
ESDR0502NMUTBG alternative parts: TPD3E001DRYR
| Hide Shared Attributes |
 |
 |
| Part Number |
ESDR0502NMUTBG +BOM |
TPD3E001DRYR +BOM |
| Manufacturer: |
ON Semiconductor |
Texas Instruments |
| Description: |
ON SEMICONDUCTOR ESDR0502NMUTBG
TVS-DIODE, 100W, BIDIRECTIONAL, uDFN |
TVS DIODE 5.5V 6SON |
| Lifecycle Status: |
ACTIVE (Last Updated: 1 day ago) |
ACTIVE (Last Updated: 2 days ago) |
| Factory Lead Time: |
5 Weeks |
6 Weeks |
| Mounting Type: |
Surface Mount |
Surface Mount |
| Package / Case: |
6-UFDFN |
6-UFDFN |
| Surface Mount: |
YES |
YES |
| Number of Pins: |
6 |
6 |
| Diode Element Material: |
SILICON |
SILICON |
| Breakdown Voltage / V: |
6V |
11V |
| Number of Elements: |
1 |
1 |
| Reverse Stand-off Voltage: |
5.5V |
5.5V |
| Operating Temperature: |
-40°C~125°C TJ |
-40°C~85°C TA |
| Packaging: |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published: |
2012 |
- |
| Pbfree Code: |
yes |
yes |
| Part Status: |
Active |
Active |
| Moisture Sensitivity Level (MSL): |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations: |
6 |
6 |
| Termination: |
SMD/SMT |
SMD/SMT |
| ECCN Code: |
EAR99 |
EAR99 |
| Type: |
Steering (Rail to Rail) |
Steering (Rail to Rail) |
| Terminal Finish: |
Nickel/Gold/Palladium (Ni/Au/Pd) |
Nickel/Palladium/Gold (Ni/Pd/Au) |
| Applications: |
Ethernet |
General Purpose |
| Capacitance: |
300FF |
1.5pF |
| Max Power Dissipation: |
100W |
- |
| Terminal Position: |
DUAL |
DUAL |
| Depth: |
1mm |
1mm |
| Base Part Number: |
ESDR0502 |
TPD3E001 |
| Pin Count: |
6 |
6 |
| Operating Supply Voltage: |
5.5V |
5.5V |
| Working Voltage: |
5.5V |
5.5V |
| Configuration: |
SINGLE |
SINGLE |
| Number of Channels: |
4 |
3 |
| Leakage Current: |
1μA |
1nA |
| Power Dissipation: |
100W |
- |
| Power Line Protection: |
Yes |
Yes |
| Max Reverse Leakage Current: |
1μA |
1nA |
| Clamping Voltage: |
8kV |
105.5V |
| Voltage - Reverse Standoff (Typ): |
5.5V Max |
5.5V Max |
| Peak Pulse Current: |
3A |
10A |
| Max Surge Current: |
3A |
- |
| Peak Pulse Power: |
100W |
90W |
| Direction: |
Unidirectional |
Unidirectional |
| Halogen Free: |
Halogen Free |
- |
| Test Current: |
1mA |
10mA |
| Unidirectional Channels: |
3 |
- |
| Capacitance @ Frequency: |
0.3pF @ 1MHz |
- |
| Height: |
500μm |
600μm |
| Length: |
1.2mm |
1.45mm |
| Width: |
1mm |
1mm |
| REACH SVHC: |
No SVHC |
No SVHC |
| Radiation Hardening: |
No |
No |
| RoHS Status: |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free: |
Lead Free |
Lead Free |
| JESD-609 Code: |
- |
e4 |
| Peak Reflow Temperature (Cel): |
- |
260 |
| Interface: |
- |
USB |
| Thickness: |
- |
500μm |
WlS Electronic has a vast inventory of onsemi ESDR0502NMUTBG. We guarantee that these are authentic and brand - new components sourced directly from onsemi. If required, we can provide quality test reports for the ESDR0502NMUTBG. To get a quotation, simply fill in the desired quantity, your contact name, and your email address in the quick quotation form on the right - hand side. Our sales representatives will reach out to you within 12 hours. You can contact us online at any time. Moreover, you may send us an email at: SALES@WLSCHIP.COM.
